ULTRA-HIGH VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS THIN-FILMS ONTO SI(100) USING A SINGLE-SOURCE PRECURSOR

[摘要] Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400-degrees-C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger electron spectroscopy indicates that carbon is incorporated into the film in the initial stages of film growth and that the films are arsenic-deficient.

[发布日期] 1991-12-01