Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film

[摘要] A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/center dot center dot center dot/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. Crown Copyright (c) 2011 Published by Elsevier B.V. All rights reserved.

[发布日期] 2012-02-01

[效力级别]  Proceedings Paper

[关键词] Multilayer;Stacked oxide;Resistive memory;RRAM