Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology
[摘要] The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors. (C) 1999 Elsevier Science S.A. All rights reserved.
[发布日期] 1999-09-07 [发布机构]
[效力级别] Proceedings Paper [学科分类]
[关键词] ion-sensitive field-effect transistors;CMOS sensors;silicon oxynitride [时效性]
