ELECTRON-HOLE COMPETITION EFFECTS IN PHOTOCURRENTS GENERATED BY MOVING SPACE-CHARGE FIELDS IN PHOTOCONDUCTIVE SEMICONDUCTORS WITH DEEP-LEVEL TRAPS

[摘要] The dependence of dc photocurrents generated by moving optical interference patterns inside two-sign charge carrier photoconductive semiconductors with deep level traps on fringe spacing and velocity was determined. Sign reversal of the photocurrent as the grating spacing varies was predicted and verified experimentally in an InP:Fe crystal. Material characteristics for InP:Fe and CdTe:V samples were also determined using this effect.

[发布日期] 1994-10-15