Voltage-controlled negative refractive index in vertically coupled quantum dot systems

[摘要] The authors demonstrate that negative index of refraction can be achieved by tuning the tunneling rate between InGaAs quantum dots layers via simply applying a bias voltage across the layers. As the bias voltage is changed, the index of refraction is tunable from negative through zero to positive. Moreover, the large negative refractive index and little loss can be achieved at the same time. (c) 2010 Elsevier B.V. All rights reserved.

[发布日期] 2010-10-15

[关键词] Quantum dots;Negative index refraction;Voltage-controlled