Light-induced anelastic change in a-Si(H)

[摘要] The thermal desorption spectra between 400 and 1100 K and the internal friction spectra between 80 and 423 K were studied for a-Si(H). The thermal desorption of hydrogen was observed around 650 K (TDH650 K) and around 900 K (TDH900 K,L and TDH900 K,H). Both TDH900 K,L and TDH900 K,H with the activation energy of 1.6 eV were attributed to the desorption of bonded hydrogen. TDH650K was not a diffusion controlled process with the activation energy of 1.0eV, where one part of TDH650K was attributed to the desorption of isolated hydrogen molecules. The hydrogen-induced internal friction, H-Q(a-Si(H))(-1)(,) was observed between 80 and 423 K. Hydrogen responsible for H-Q(a-Si(H))(-1). showed the thermal a-Si(H), a-Si(H) desorption around 650 K (TDH650 K), indicating that isolated hydrogen molecules in the amorphous structure may be responsible for H-Q(a-Si(H))(-1)(.) Light soaking caused changes in H-Q(a-Si(H))(-1) in the temperature ranges between 80 and 200K and between 200 and 300K, indicating that light soaking modified the local amorphous structures responsible for these changes in Q(a-Si)(-1)(H)(.) (c) 2006 Elsevier B.V. All rights reserved.

[发布日期] 2006-12-20

[效力级别]  Proceedings Paper

[关键词] a-Si(H): internal friction;thermal desorption;Staebler-Wronski effect