X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon

[摘要] The paper reports data on the kinetics of anodic oxide films growth on silicon in aqueous solutions of phosphoric acids as well as a study of the morphology of the oxides grown in a special regime of the oscillating anodic potential. X-ray reflectivity measurements were performed on the samples of anodic oxides using an intense synchrotron radiation source. They have a multilayer structure as revealed by theoretical fitting of the reflectivity data. The oscillations of the anodic potential are explained in terms of synchronized oxidation/dissolution reactions at the silicon surface and accumulation of mechanical stress in the oxide film. (C) 2000 Elsevier Science S.A. All rights reserved.

[发布日期] 2000-09-15

[效力级别]  Proceedings Paper

[关键词] electrochemical oscillations;anodic silicon oxide;x-ray reflectivity