Characterizing and Modeling RTN Under Real Circuit Bias Conditions

[摘要] Random telegraph noise (RTN) has attracted much attention, as it becomes higher for smaller devices. Early works focused on RTN in linear drain current, I-D,I-LIN, and there is only limited information on RTN in saturation current, I-D,I-SAT. As transistors can operate in either linear or saturation modes, lack of RTN model in I-D,I- SAT prevents modeling RTN for real circuit operation. Moreover, circuit simulation requires both driving current and threshold voltage, V-TH. A common practice of early works is to evaluate the RTN in V-TH by Delta V-TH = Delta(ID,LIN)/g(m), where gm is the transconductance. It has been reported that the Delta V-TH evaluated in this way significantly overestimates the real Delta V-TH, but there is little data for establishing the cumulative distribution function (CDF) of the real Delta V-TH. An open question is whether Delta V-TH and Delta I-D,I-LIN/I-D,I- LIN follow the same CDF. The objectives of this work are threefold: to provide statistical test data for RTN in I-D,I-SAT; to measure the RTN in real Delta V-TH by pulse I-D-V-G; and, for the first time, to apply the integral methodology for developing the CDF per trap for all four key parameters needed by circuit simulation-Delta I-D,I-LIN/I-D,I-LIN, Delta I-D,I-SAT/I-D,I-SAT, Delta V-TH,V-LIN, and Delta V-TH,SAT. It is found that the log-normal CDF is the best for Delta I-D,I-LIN/I-D,I- LIN and Delta I-D,I-SAT/I-D,I-SAT, while the general extreme value CDF is the best for Delta V-TH,V- LIN and Delta V-TH,V-SAT. Both Delta I-D,I-SAT/I-D,I- SAT and Delta V-TH,V- SAT are higher than their linear counterparts and separate modeling is required. Finally, the applicability of integral methodology in predicting the long term Delta I-D,I-LIN/I-D,I- LIN is demonstrated.

[效力级别]  Early Access

[关键词] TO-DEVICE VARIATION