Numerical Analysis of the Heat Transfer in Heterojunction Device forOptoelectronic Applications

[摘要] Physical and numerical descriptions related to the heat transfer phenomenon inside the multilayer nanomaterial of thin film are determined. The mathematical model, of a multilayer of thin film of tin dioxide that deposits on a composite substrate of Silicon Dioxide/Silicon, is studied and solved by two numerical techniques, by taking into account the variability of the thermal conductivity. The two main interests in this study are the determination of the value of the applied maximum temperature on the multilayer nanomaterial, and the analysis, of the effect of the porosity medium that exists between certain layers, on the heat transfer. In plus, in order to determine our system physical parameters, the influence of the thickness of the thin deposit film is studied and the numerical model, which estimates these values in the heterojunction device, is analyzed.

[关键词] Nanomaterials;Heterojunction;Heat transfer;Tin dioxide;Multilayer