Small-Signal Amplifier with MOSFET and BJT inTriple Darlington Configuration

[摘要] A new circuit model of a small-signal narrow-band amplifier is proposed and analyzed on the qualitative scale. Proposed amplifier uses two MOSFETs and a BJT in Triple Darlington configuration with two additional biasing resistances in the circuit. With low distortion percentage (1.28%), the proposed circuit successfully amplifies small-signals of 1-10mV range and simultaneously provides high voltage gain (311.593) and current gain (13.971K) with narrow bandwidth (9.665KHz). Variations of maximum voltage gain with different biasing resistances and DC supply voltage and the temperature sensitivity of various performance parameters are elaborately studied and discussed in length. Qualitative performance of the proposed amplifier is also compared with the circuit which is having BJT-MOSFET in Darlington pair configuration. The proposed amplifier can be used to process audio range signal excursions and may be useful for those applications where high voltage and current gain would be the prime requirement of amplification in narrow-band low frequency region.

[关键词] Small-signal amplifiers;Common Source MOS amplifiers;Triple Darlington amplifiers;MOSFET Darlington pairs