Preparation and characterization of Al-doped ZincOxide films deposition by Ion beam assistedMolecular Beam Epitaxy

[摘要] Al-doped ZnO Thin Films were deposited on glass Substrates at room temperature by Ion beam assisted Molecular Beam Epitaxy deposition. Crystal linty, Microstructure, Surface Roughness, electrical and optical prosperities of thin films were investigated as function of deposition parameter such as ion energy. The microstructure of Al-doped ZnO Crystalline films on amorphous glass Substrates were closely related to oxygen Ion energy bombardment on the growing Surface of the film may be divided into two Categories : 1) The enhancement of atom Mobility at low energetic Ion bombardment. 2) The surface damage by radiation damage at high energetic Ion bombardment. Large of the sizes grain structure was obtained in the films deposited at 300eV. With Increasing the Ion energy to 600eV, large of the sizes grain structure was changed into the grain structure. At the high energy Ion bombardment of 600eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure and Crystal linty. The Al-doped ZnO films with the large of the sizes grain structure have the good electrical properties than those with the grain structure, because the grain boundary scattering was reduced in the large sizes structure compare with the small size grains. The optical photoluminescence of Al-doped ZnO Films was dependent on a grain size.

[关键词] Al-doped ZnO;Ion beam assisted molecular beam epitaxy;transparent conducting oxide