Low Noise Amplifier at 2.4 GHz for Zigbee inMOS 180nm Technology

[摘要] The main focus of this paper is to design a “Low noise amplifier” for radio frequency applications using MOS 180nm technology. In modern RF electronics, we rarely design an LNA in isolation. Rather, we view and design the RF chain as one entity, performing many iterations among the stages. A low power MOS low noise amplifier (LNA) working at 2.4GHz for ZigBee communication is presented in this paper. The common source (CS) stage with inductive load and Cascode stage with inductive load is adapted and various parameters are compared like Gain, Input intercept point (IIP3) and Noise figure are compared between the two LNA architectures. The simulations are done and compared using H-SPICE.

[关键词] MOS;Low noise amplifier;Gain;Noise figure;IIP3.