Si-based Ka-band SIW band-pass filter using wafer level manufacturing process

[摘要] In this letter, a SIW (substrate integrated waveguide) linear coupling band-pass filter working in Ka-band is presented, it is designed to be a part of a Ka-band receiver front end. Due to the super heterodyne structure of the receiver, the system contains lots of chips, therefore stacked packaging structure is used. Considering the heat dissipation efficiency, process accuracy and cost, novel wafer-level silicon manufacturing process is adopted to fabricate the SIW filter. The design of the filter employs the coupling coefficients extraction method. Finally, a fourth-order band-pass filter was designed, manufactured and tested. The measured results are in good agreement with the simulation results, verifying the practicability of the silicon-based SIW filter in RF front end microsystem.

[学科分类] 电子、光学、磁材料

[关键词] band-pass filters ,coupling coefficients ,substrate integrated waveguide ,Si-based ,system-in-package ,wafer-level process