Electrothermal Modeling of the Insulated Gate Bipolar Transistor (IGBT) Using PSpice: Application to DC–DC Converter

[摘要] In this paper, an improved electrothermal model of power IGBT was developed. The main local physical effects were taken into consideration. The suggested model is able to address the electrical and thermal effects. The model was confirmed through a comparison with other models having close characteristics for different circuits (DC–DC converter, turn-on and turn-off) and different temperatures. The IGBT model was implemented in the PSpice circuit simulation platform using PSpice standard components and analog behavior modeling (ABM) blocks. The IGBT switching performance was investigated under influence of different circuit elements (such as stray inductance, gate resistance and temperature) in order to study and estimate the on-state and switching losses pre-requisite for the design of various converter and inverter topologies. The comparison shows that these models are simple, tunable with the electric circuit software simulator. They are more capable of predicting the main circuit parameters needed for power electronic design. The transient thermal responses were demonstrated for the single pulse and repeat modes. The achieved results show that our model is suitable for full electrothermal simulations of power electronic circuits.

[学科分类] 自动化工程

[关键词] IGBT;PSpice;Electrothermal model;DC–DC converter