Physical insight and performance metrics of monolayer MX 2 heterojunction TFETs
[摘要] The physics and performance of monolayer MX 2 heterojunction n TFETs are studied using a quantum simulation. The imaginary wave vector reveals that WTe 2 is the most promising source material. Results of heterojunction TFETs with WTe 2 source material and of WTe 2 homojunction TFET reveal that WTe 2 –MoS 2 heterojunction TFET is the most promising candidate with a 620 μA/μm drive current for a 0.3 volt gate swing. The energy gap between the valence band of source material and the conduction band of channel material, , is the key parameter for high drive current. The WTe 2 –MoS 2 heterojunction has the smallest value that results in small band bending near the heterojunction, which creates the shortest tunnel path and therefore yields the highest drive current. The WTe 2 –MoS 2 TFET has an average turn-on slope of 15.6 mV/dec, an on/off current ratio of , a drive current of 620 μA/μm, a transconductance of 10.98 mS/μm, a total capacitance of 0.829 fF/μm, a switching delay of 0.401 ps, and a cutoff frequency of 2.1 THz. The performance metrics closely comply with the ITRS 2026 LOP and LSTP device requirements. Its value of 11.97 μA/μm is large enough to compete with MOSFETs.
[发布日期] [发布机构]
[效力级别] [学科分类] 计算机科学（综合）
[关键词] conduction bands;valence bands;MOSFET;tunnel transistors;tunnelling;monolayers;energy gap;semiconductor doping;semiconductor heterojunctions;tungsten compounds;molybdenum compounds;high electron mobility transistors;performance metrics;doped source material;homojunction TFET;channel material;source valence band;channel conduction band;band tunnelling;metal oxide semiconductor field-effect transistors;complex E–k curve;energy gap;quantum simulation;monolayer MX2 heterojunction TFET;vector plots;high drive current;monolayer MX2heterojunction n-channel tunnelling field-effect transistors;relative small junction field;shortest tunnel path;heterojunction tunnel transistor;switching delay;cut-off frequency;low standby power device requirements;reference independent figure of merit;small band bending;band to band tunnelling;voltage 0.3 V;voltage 15.6 mV;time 0.401 ps;frequency 2.1 THz;WTe2-MoS2 [时效性]
