Pyramid textured Si{100} surface with low reflectivity in CMOS compatible solution
[摘要] Phishing detection is an area of identifying malicious activities designed by phishers to lure users providing sensitive information. Existing anti-phishing systems use blacklists based on specific parameters, characterize attacker’s activities with artificial and computational approaches and educate users. The development and maintenance of these systems is hard and costly because of the polymorphic nature of phishing techniques. Phishing attacks are able to scam humans with insufficient knowledge, while countermeasures focus on specific characteristics to make decisions. Defining formal approaches for representing and reasoning knowledge in anti-phishing systems is therefore a concern. This work deals with this issue by proposing formalized description logic to build the knowledge base of phishing attacks. It additionally designs an ontology-oriented approach to add semantics on that knowledge. The ontology model has been proven consistent and satisfiable. Experimentations on case studies demonstrate the ability of the proposed model to represent knowledge attack scenarios. A comparison with state-of-the-art researches shows that the proposed formalism is more adequate to characterize phishing semantics. This work could successfully complement anti-phishing systems.
[发布日期] [发布机构]
[效力级别] [学科分类] 计算机科学（综合）
[关键词] elemental semiconductors;reflectivity;etching;solar cells;surface morphology;silicon;wetting;surface texture;CMOS integrated circuits;low reflectivity;CMOS compatible solution;wet anisotropic etching;Si{100} results;geometrical structures;surface reflectance;multiple internal reflections;incident ray;solar cells;surface texturing;etching time;extremely low concentration TMAH;silicon surface;etching temperature;etching concentration;surface morphology;dense structures;uniform pyramidal structures;silicon samples;average solar weighted reflectance;very low concentration CMOS compatible tetramethylammonium hydroxide;pyramid textured Si{100} surface;micropyramids;temperature 80.0 degC to 95.0 degC;time 5.0 min to 40.0 min;Si [时效性]
