Compact border termination for active-edge planar radiation detectors with enhanced breakdown voltage
[摘要] A design modification to an existing border termination for active-edge planar radiation detectors is proposed, which enables a dead area reduction and a much larger breakdown voltage to be achieved, with a minor increase in the fabrication complexity. ‘Technology Computer-Aided Design’ simulations allowed the device performance of different variants of the proposed structure to be investigated also in comparison with the existing one. Among considered designs, the new border terminations with 2(3) guard rings, featuring a dead area at the edge of ∼90(120) μm, can withstand more than 375(500) V for all oxide charge density values up to 3 × 10 12 cm −2 . These characteristics make them appealing for X-ray imaging applications at free-electron laser facilities.
[发布日期] [发布机构]
[效力级别] [学科分类] 计算机科学（综合）
[关键词] silicon radiation detectors;semiconductor device breakdown;technology CAD (electronics);free-electron laser facilities;X-ray imaging applications;oxide charge density values;guard rings;fabrication complexity;technology computer-aided design simulations;breakdown voltage;dead area reduction;design modification;enhanced breakdown voltage;active-edge planar radiation detectors;compact border termination [时效性]
