Uncooled CMOS fully integrated antenna-coupled terahertz thermal detector
[摘要] In this Letter, an uncooled monolithic resonant terahertz (THz) thermal detector using a standard 55 nm CMOS technology is presented. The detector is constructed by the integration of a loop antenna loaded with a polysilicon resistor and a proportional to absolute temperature sensor, which is used as a temperature-sensitive device. An overview of the design considerations, as well as the comparatively better characterisation results are demonstrated in detail. A high-temperature coefficient of voltage (TCV D ) of 10.11 mV/°C, a maximum responsivity of 48.67 V/W, and a minimum noise equivalent power of 1.22 μW/Hz 0.5 for the thermal detector are measured at the optimal operating point of 2.58 THz.
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[效力级别] [学科分类] 计算机科学（综合）
[关键词] CMOS integrated circuits;temperature sensors;loop antennas;resistors;temperature measurement;submillimetre wave antennas;resonators;silicon;elemental semiconductors;uncooled CMOS fully integrated antenna-coupled terahertz thermal detector;uncooled monolithic resonant terahertz;standard CMOS technology;loop antenna;temperature-sensitive device;uncooled monolithic resonant THz thermal detector;polysilicon resistor;TCVD;high-temperature coefficient of voltage;size 55.0 nm;frequency 2.58 THz;Si [时效性]
