A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

[摘要] In this letter, a 30MHz-3GHz 1W ultra-broadband stacked power amplifier (PA) fabricated in 0.25um GaAs pHEMT technology process is presented. By inserting an RC network between the bridge-T input lossy matching network and the stacked-FET, the stability enhancement and input standing wave ratio (SWR) optimization are achieved with high frequency gain compensation. Based on the performance simulations of the stacked-PA with various normalized output load impedance, an optimal output matching method is applied, which obtains 31±1dBm output power at 15dBm input power, while the peak PAE achieves 60.2% at 30MHz and the PAE larger than 35% over all of the operating frequency band. Moreover, the size of MMIC PA achieves 1.51mm2 with 50Ω input and output matching.

[学科分类] 电子、光学、磁材料

[关键词] GaAs pHEMT;stacked-FET;lossy matching network