A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

[摘要] This paper presents a compact 24-32GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity of degeneration inductor and the effect of the driving stage on linearity are analyzed. To achieve flat broadband, the transformer is also used in the inter-stage matching. Output matching for low insertion loss networks has been selected carefully. The amplifier demonstrates a small signal gain of 11.3dB range from 24GHz to 32GHz with a gain flatness of ±0.5dB. Measurements show a maximum power added efficiency (PAE) of 18.54% with output 1dB compression power for 7.6dBm at 32GHz.

[学科分类] 电子、光学、磁材料

[关键词] high linearity;broadband;amplifier;SiGe BiCMOS