Wideband transmission optimization for heterogenous interconnection in 3D IC

[摘要] Through-silicon via (TSV) is proved to have great potential in high density, high performance integrated circuit. This work aims at reducing the loss of heterogeneous interconnection in three-dimensional integrated circuit (3D IC). The equivalent circuit models of TSV and redistribution layer (RDL) are established, they are in good agreement with finite element method (FEM) simulation results. An optimized structure with capacitive element is proposed to improve the transmission in heterogenous interconnection. The simulation indicates great transmission improvement at wide band from DC to 70GHz.

[学科分类] 电子、光学、磁材料

[关键词] heterogeneous interconnection;through-silicon via (TSV);transmission loss