A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP 1dB in 0.13-µm CMOS

[摘要] A K-band CMOS broadband low noise amplifier (LNA) based on the magnetically coupled resonator (MCR) matching network technique is presented and implemented in 0.13-µm CMOS technology. Such LNA consists of two common-source (CS) pseudo-differential stages, which use the capacitive neutralization technique to enhance the inversion isolation and Gain. The MCR-based input matching network achieves good balance and loss performance by inventing a compensated capacitor and series resistor loaded at the center point of the transformer’s second coil, which improves the linearity and Noise Figure (NF) of the LNA. The measurement NF is 3.7-5.6dB within the frequency range of 20.9-26.2GHz (BW3dB), and the peak gain is 18.8dB. The measured IP1dB is -13dBm at 24GHz with a power consumption of 18mW under 1.2V supply.

[学科分类] 电子、光学、磁材料

[关键词] broadband;magnetically coupled resonator (MCR);compensated capacitor;series resistor;low noise amplifier (LNA)