Impact of H 2 gas on the properties of MoS 2 thin films deposited by sulfurization of Mo thin films

[摘要] MoS 2 has gained tremendous interest due to its highlighting electronic and optoelectronic properties. In this work, an attempt has been made to develop a CMOS compatible process for the fabrication of a MoS 2 thin film. In the first step, molybdenum (Mo) thin film was deposited on silicon substrate by RF magnetron sputtering. In the second step, chemical vapor deposition (CVD) was used for the synthesis of MoS 2 using a custom-designed dual zone tubular furnace. The impact of hydrogen (H 2 ) on the CVD growth of MoS 2 thin film was studied with the mixture of H 2 and argon (Ar) gas in 1:10 ratio. AFM and FESEM images revealed a uniform and smooth growth of MoS 2 films using H 2 as a reducing gas. Raman characteristics peaks, observed at 386 cm −1 and 408 cm −1 , have confirmed the formation of MoS 2 film, which corresponds to the hexagonal coordination (2H). The intensity of photoluminescence peak of MoS 2 thin film is found to be increased with hydrogen treatment. Moreover, the impact of H 2 gas was systematically studied on the electrical properties and a reduction in the carrier concentration of MoS 2 was observed with a flow of 20 sccm H 2 . A detailed study on the impact of H 2 gas and MoS 2 /Si heterojunction properties were also performed.

[学科分类] 计算机科学（综合）