Strain effects on the surface optical transitions of GaAs

[摘要] The surface optical properties of GaAs on Cap-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies as thin as 1 ML of GaAs deposited on top of GaP. This small shift is consistent with a transition between dimer states and dangling bond states of the Ga-Ga dimers. [S0163-1829(98)07439-6].

[关键词] REFLECTANCE-DIFFERENCE SPECTROSCOPY;CRITICAL-POINT PARAMETERS;TEMPERATURE-DEPENDENCE;DEFORMATION POTENTIALS;001 GAAS;GROWTH;EPITAXY;FILMS;GAP