Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)

[摘要] Analysis of homoepitaxial growth on Ir(111) by scanning tunneling microscopy (STM) reveals that two different phases nucleate. We find islands in the regular face-centered cubic (fcc) stacking as well as in the hexagonal close-packed (hcp) stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. By applying first-principles calculations, the voltage dependent height difference can be attributed to the difference in the electronic structures of the two phases. The atoms in hcp stacking appear lower for a wide range of tunneling voltages, opposite to the actual relaxation.

[发布日期] 2003-11-01

[关键词] BY-LAYER GROWTH;HOMOEPITAXIAL GROWTH;STACKING-FAULT;METAL-SURFACES;TWIN FORMATION;CU(111);SUPPRESSION;IMAGES;FILMS