Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

[摘要] We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities.

[发布日期] 2004-11-01

[关键词] QUANTUM-WELLS;TRANSPORT;LAYERS;GAAS