Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

[摘要] The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e(2)/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

[发布日期] 2003-12-01

[关键词] 2 DIMENSIONS;GAAS/ALXGA1-XAS HETEROSTRUCTURE;ELECTRON-GAS;COULOMB GAP;TRANSITION;LOCALIZATION;BEHAVIOR;MOBILITY;CRYSTAL