Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

[摘要] The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of B-10 with B-11 were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

[发布日期] 2005-12-01

[关键词] CRYSTALLINE SILICON;MOLECULES;PASSIVATION;NEUTRALIZATION;ACCEPTORS;DEFECTS;DONORS;STATES;SI