Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

[摘要] We measure the effective mass in a dilute two-dimensional electron system in (111) silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r(s) is in good agreement with that reported for (100) silicon, which shows that the relative mass enhancement is system and disorder independent, being determined by electron-electron interactions only.

[发布日期] 2007-12-01

[关键词] METAL-INSULATOR-TRANSITION;OSCILLATIONS;DENSITY