LATERAL-SUPERLATTICE EFFECT ON WEAK LOCALIZATION IN SILICON INVERSION-LAYERS

[摘要] It is found that the magnitude of the weak-localization (WL) correction to the conductance in a lateral superlattice (LSL) differs considerably from that in a homogeneous two-dimensional electron gas. The LSL effects were observed by measuring the dependence of the magnetoconductance on the strength of a modulated potential in silicon inversion layers. For parallel transport in a LSL the WL is enhanced, while it is reduced for perpendicular transport. This agrees with a recent theory for WL in a LSL. The effect is larger for stronger potential modulation and its maximum value deduced from the experiments is 2.8.

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