Atomic layering at the liquid silicon surface: A first-principles simulation

[摘要] We simulate the liquid silicon surface with first-principles molecular dynamics in a slab geometry. We find that the atom-density profile presents a pronounced layering, similar to those observed in low-temperature liquid metals like Ga and Hg. The depth-dependent pair correlation function shows that the effect originates from directional bonding of Si atoms at the surface, and propagates into the bulk. The layering has no major effects in the electronic and dynamical properties of the system, that are very similar to those of bull; liquid Si. To our knowledge, this is the first study of a liquid surface by first-principles molecular dynamics. [S0163-1829(99)50648-6].

[关键词] X-RAY REFLECTIVITY;MONTE-CARLO SIMULATIONS;VAPOR INTERFACE;MOLECULAR-DYNAMICS;ELECTRONIC-PROPERTIES;ALKALI-METALS;LARGE SYSTEMS;GALLIUM;DIFFRACTION;CRYSTAL