Core-level photoemission study of Ga1-xMnxAs

[摘要] We have studied the electronic structure of Mn impurities in GaAs by Mn 2p core-level photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn3+) or negatively ionized (Mn2+) ground state, electronic structure parameters have been obtained. In either case, the Mn d electron number is evaluated to be similar to 5 using the obtained parameters, meaning that the neutral Mn3+ impurity, if it exists, consists of the Mn 3d(5) configuration and a valence hole bound to it through p-d hybridization and/or Coulomb interaction. We discuss the exchange interaction between the Mn local spin and the Valence hole as well as the stability of the neutral impurity against the ionization of the valence hole.

[关键词] DILUTED MAGNETIC SEMICONDUCTORS;TRANSITION-METAL IMPURITIES;II-VI SEMICONDUCTORS;ELECTRONIC-STRUCTURE;MAGNETOTRANSPORT PROPERTIES;EXCHANGE INTERACTION;GAAS