Calculations of surface effects on phonon modes and Raman intensities of Ge quantum dots

[摘要] Phonon modes and Raman intensities of Ge quantum dots (QDs) with two different types of surfaces, a free standing surface or a fixed surface, in a size range from five atoms to 7 nm in diameter, are calculated by using a microscopic valence force field model. The results are compared, and the effects of surfaces on phonon properties of QDs are investigated. It is found that phonon modes and Raman intensities of QDs with these two different types of surfaces have obvious differences which clearly reveal the effects of the surfaces of QDs. The calculated results agree with existing experimental observations. We expect that our calculations will stimulate more experimental measurements on phonon properties and Raman intensities of QDs.

[关键词] LOW-DIMENSIONAL SYSTEMS;SEMICONDUCTOR MICROCRYSTALLITES;SI NANOCRYSTALS;CONFINEMENT;SCATTERING;CDSE;SHIFTS;STATES