Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering

[摘要] We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with dissimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin-relaxation times in gallium arsenide.

[发布日期] 2003-12-01

[关键词] CONDUCTION ELECTRONS;FLIP SCATTERING;SEMICONDUCTORS