HIGH-FIELD ZEEMAN-EFFECT OF SHALLOW ACCEPTORS IN GERMANIUM

[摘要] Zeeman absorption spectra have been obtained for B and Ga in Ge for B parallel-to [100] in the Voigt configuration with plane-polarized radiation. All twelve allowed transitions were observed for both the G and D lines. The corresponding excited states of these two lines for both impurities behave identically; two recent theoretical results are in good agreement. The measurements are a sensitive probe of the ground states; there are differences between the behavior of these for the two acceptors.

[关键词] EXCITATION-SPECTRA;CUBIC SEMICONDUCTORS;SPHERICAL MODEL;STATES;BORON;GE