Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

[摘要] tsIncorporation of Schottky Junction increases the pseudocapacitive mechanism at higher current rate.The pseudocapacitance behavior of the positive and negative electrodes is balanced to construct a solid-state supercapattery device.An energy density of 236.14 Wh kg−1 is achieved for solid-state supercapattery device.

[发布日期] 2022-12-30

[关键词] Pseudo-capacitance;Negative electrode;Supercapattery;Atomic layer deposition;Energy density