CACTI 5.1

[摘要] CACTI 5.1 is a version of CACTI 5 fixing a number of small bugs in CACTI 5.0. CACTI 5 is the latest major revision of the CACTI tool for modeling the dynamic power, access time, area, and leakage power of caches and other memories. CACTI 5 includes a number of major improvements over CACTI 4. First, as fabrication technologies enter the deep-submicron era, device and process parameter scaling has become non-linear. To better model this, the base technology modeling in CACTI 5 has been changed from simple linear scaling of the original CACTI 0.8 micron technology to models based on the ITRS roadmap. Second, embedded DRAM technology has become available from some vendors, and there is interest in 3D stacking of commodity DRAM with modern chip multiprocessors. As another major enhancement, CACTI 5 adds modeling support of DRAM memories. Third, to support the significant technology modeling changes above and to enable fair comparisons of SRAM and DRAM technology, the CACTI code base has been extensively rewritten to become more modular. At the same time, various circuit assumptions have been updated to be more relevant to modern design practice. Finally, numerous bug fixes and small feature additions have been made. For example, the cache organization assumed by CACTI is now output graphically to assist users in understanding the output generated by CACTI. 74 Pages

[发布机构] HP Development Company

[学科分类] 计算机科学（综合）

[关键词] cache;memory;area;power;access time;DRAM