Effect of Electron Launcher Structures on AlAs/GaAs Double Barrier Resonant

[摘要] We have studied experimentally the effect of several electron launcher structures on AlAs/GaAs double barrier resonant diodes (RTD). The experimental results show that a linearly graded AlGaAs launcher structure improves the tunneling current by presumably removing the hump in the conduction band caused by the space charges near the n-i junction in the spacer layer. Peak current densities as high as 170kA/cm(squared) with a peak-to-valley current ration of 3.2 were obtained from these graded launcher RTD's. Compared with the conventional RTD, the graded launcher gives a 50% improvement in the peak current density while reducing the peak-current voltage by 40% and maintaining a similar peak-to-valley current ratio.

[发布机构] HP Development Company

[学科分类] 计算机科学（综合）