Single photon detection with self-quenching multiplication
[摘要] A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.
[发布日期] 2011-09-20 [发布机构]
[效力级别] [学科分类] 物理(综合)
[关键词] [时效性]