Silicon carbide and other films and method of deposition

[摘要] A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

[发布日期] 2011-11-01

[学科分类] 电子与电气工程