Radiation Effects of Commercial Resistive Random Access Memories

[摘要] We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

[发布日期] 2014-06-17

[学科分类] 电子与电气工程