Dopant Selective Reactive Ion Etching of Silicon Carbide

[摘要] A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

[发布日期] 2016-09-27

[学科分类] 电子与电气工程