Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C

[摘要] Prolonged 500 degrees Celsius to 700 degrees Celsius electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability limits of the present version of NASA Glenn's extreme temperature microelectronics technology. The results of this study support the hypothesis that T = 500 degrees Celsius durability-limiting IC failure initiates with thermal-stress-related crack formation where dielectric passivation layers overcoat micron-scale vertical features including patterned metal traces.

[发布日期] 2016-09-25

[学科分类] 电子与电气工程