Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.
[摘要] Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.
[发布日期] 2008-08-01 [发布机构]
[效力级别] [学科分类] 物理（综合）
[关键词] DIFFUSION;INTEGRATED CIRCUITS;IRRADIATION;NEUTRONS;SANDIA NATIONAL LABORATORIES;SENSITIVITY;SHUTDOWN;SIMULATION;TRANSISTORS Electronic circuits.;Power transistors.;Transistors.;Sandia National Laboratories;Gamma Irradiation Facility [时效性]
