Technical Progress Report for "Optical and Electrical Properties of III-Nitrides and Related Materials"
[摘要] Investigations have been conducted focused on the fundamental material properties of AIN and high AI-content AIGaN alloys and further developed MOCVD growth technologies for obtaining these materials with improved crystalline quality and conductivities.
[发布日期] 2008-10-31 [发布机构]
[效力级别] [学科分类] 材料科学（综合）
[关键词] ALLOYS;ELECTRICAL PROPERTIES;PROGRESS REPORT III-Nitrides;AIGaN Alloys;bandgap;exciton localization;cation vacancies;n-type conductivity control;Growth and phtoluminescence studies of Zn-doped AIN epilayers;high crystalline quality AIN epilayer growth technology [时效性]
