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Modelling off Hugoniot Loading Using Ramp Compression in Single Crystal Copper
[摘要] The application of a ramp load to a sample is a method by which the thermodynamic variables of the high pressure state can be controlled. The faster the loading rate, the higher the entropy and higher the temperature. This paper describes moleculer dynamics (MD) simulations with 25 million atoms which investigate ramp loading of single crystal copper. The simulations followed the propagation of a 300ps ramp load to 3Mbar along the [100] direction copper. The simulations were long enough to allow the wave front to steepen into a shock, at which point the simulated copper sample shock melted.
[发布日期] 2010-11-29 [发布机构] 
[效力级别]  [学科分类] 材料科学(综合)
[关键词] ATOMS;COMPRESSION;COPPER;ENTROPY;LOADING RATE;MONOCRYSTALS;THERMODYNAMICS [时效性] 
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