Final Scientific Report

[摘要] The response of dielectric material to electromagnetic waves in the millimeter wavelength range (30 to 300 GHz) has received relatively little study and the processes that give rise to absorption in this region are often poorly understood. Understanding the origin of absorption at these wavelengths has basic significance for solid state physics as well as importance for development of technology in this region of the RF spectrum. This project has provided high-quality data on the temperature dependence of the dielectric loss in high-purity, semi-insulating silicon carbide (HPSI SiC), a material that holds much promise for application, especially in devices that must operate in the high power and high frequency regime. Comparison of this experimental data with theoretical predictions for various loss processes provides convincing evidence that the loss in HPSI SiC arises almost entirely from intrinsic lattice loss (ILL) as described by Garin. Fitting the data to this model yields an accurate value for the Debye temperature that characterizes crystalline SiC. In addition, our results refute a previous study(2) which reported much higher loss, attributed to the presence of free charge. The quality of the data acquired in this project is clear evidence for the value of the experimental technique that was employed here. This technique combines the excitation of a high-quality open resonator by a phase-locked backward wave oscillator (BWO) with use of a spectrum analyzer to measure the change in the resonator response curve when the sample is inserted. This system has demonstrated consistent results for very challenging measurements and does not suffer from the artifacts that often arise when using other techniques that rely on thermal sources. The low absorption loss found in HPSI SiC, when combined with its other outstanding material properties, e.g. high thermal conductivity, high tensile strength, and high carrier mobility, should provide incentive for designers to utilize this material to solve the challenging problems that are encountered as devices are pushed to operate at higher frequencies and higher power levels. In particular, for the fusion energy program, it may provide an economical alternative to CVD diamond for certain gyrotron and beam line applications. In addition, the value obtained for the Debye temperature provides an important datum for modeling the crystalline structure of SiC. Clearly SiC is a unique material with few competitors and should see wider utilization.

[发布日期] 2012-12-31

[学科分类] 原子、分子光学和等离子物理

[关键词] dielectric properties;loss tangent;silicon carbide;SiC;two-phonon absorption;temperature dependence;open resonator;millimeter waves