Development of Spintronic Bandgap Materials

[摘要] The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for ???spintronics bandgap materials???. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.

[发布日期] 2014-02-16

[学科分类] 凝聚态物理

[关键词] Quantum Dots;Spintronics