Effect of annealing temperature on construction of CuO layer on electrodeposited-Cu2O layer by annealing

[摘要] We report the annealing effects on the morphological and structural properties of Cu2O films electrodeposited on Cu substrates from an aqueous solution containing copper acetate and lactic acid. The Cu2O/CuO layers has been constructed by electrodeposition of p-Cu2O layer on the modified surface of Cu substrate followed by formation of the CuO layer by annealing from 100°C to 300°C. The morphology and structural analysis was performed using optical microscope, AFM and XRD respectively. The result showed that increasing the annealing temperature resulted in the increment of the Cu2O grain size from about 96 to 201 nm. AFM reveals the precipitation of CuO grains on the Cu2O layer by annealing in air at 300°C, and completely covered the surface of Cu2O layer.

[发布机构] School of Manufacturing, Universiti Malaysia Perlis, Pauh Putra Main Campus, Perlis, Arau; 02600, Malaysia^1;Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, Taman Pertiwi Indah, Seriab, Kangar, Perlis; 01000, Malaysia^2;Faculty of Electrical and Electronic Eng, Universiti Tun Hussein Onn Malaysia, Parit Raja, Johor, Batu Pahat; 86400, Malaysia^3;Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Aichi, Toyohashi; 441-8580, Japan^4

[效力级别] 工业技术 [学科分类] 工业工程学

[关键词] Annealing effects;Annealing temperatures;Copper acetates;Cu substrate;Cu2O films;Effect of annealing;Grain size;Modified surfaces