High Performance Resistive Switching Characteristics of SiN Films with a Cu/Ta/SiN/Cu/SiN/TiN Multilayer Structure

[摘要] The bipolar resistive switching properties of SiN based conductive bridge random access memory (CBRAM) device are investigated for non-volatile memory applications in a Cu/Ta/SiN/Cu/SiN/TiN multilayer structure. The device shows good switching characteristics with set voltages between 0.8 V and 1.3 V and reset voltages between -0.3 V and - 0.7 V with a variation of less than 0.1 V. The Cu/Ta/SiN/Cu/SiN/TiN multilayer CBRAM device exhibits excellent memory performance, such as long stable endurance cycles (> 4.5x103) during the test without any degradation, good retention ability (>104s) at a temperature of 120 °C with more than 102on/off resistance ratio.

[发布机构] Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu; 30010, Taiwan^1

[效力级别] 机械制造 [学科分类] 材料科学（综合）

[关键词] Conductive-bridge random access memory (cbram);Memory performance;Multilayer structures;Non-volatile memory application;Resistance ratio;Resistive switching;Retention ability;Switching characteristics